Ionizing radiation can produce in electronic components some perturbations called “Single Event Effects”, or SEE. Using a pulsed laser, it is possible to reproduce the electrical behavior due to this phenomenon by locally injecting electric charges in the active area. The correlation with the laser position can therefore produce a map of the sensitive areas of the silicon die.
Precise localization of the sensitivity at die level, spatial resolution of 1µm
Control of electrical parameters during the acquisition
Maximum field of view: 3mmx3mm
Latch-up sensitive areas map on an ADC
Sensitivity visualization on two different synchronization states