Ionizing radiation can produce in electronic components some perturbations called “Single Event Effects”, or SEE. Using a pulsed laser, it is possible to reproduce the electrical behavior due to this phenomenon by locally injecting electric charges in the active area. The correlation with the laser position can therefore produce a map of the sensitive areas of the silicon die.

Intraspec Technologies - Nos moyens - Sensibilité aux SEE - pres mos schematic 2pl stim


Precise localization of the sensitivity at die level, spatial resolution of 1µm


Control of electrical parameters during the acquisition


Maximum field of view: 3mmx3mm



Intraspec Technologies - Nos moyens - Sensibilité aux SEE - Stimulation asynchrone

Latch-up sensitive areas map on an ADC




Sensitivity visualization on two different synchronization states

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