Integrated circuits can emit light when activated. Light EMission MIcroscopy (EMMI) uses this physical phenomenon to precisely localize specific areas in the silicon chip. By comparing differences in the emissions, it is possible to localize die level defects.
In addition, we can localize signal propagation failures by performing temporal analyses of the emitted light (TRE, Time Resolved Emission, TRI, Time Resolved Imaging).
Precise defect localization at die level scale
Preservation of component functionality
Information on temporal activity
Possibility to modify electrical parameters during acquisition
High spatial resolution(1µm)
Field of view: 10x10mm
Large working space (possibility to analyse large boards)
Short circuit localization, overconsumption, analysis of internal activity of the chip and memory descrambling
Transient leakage current localization,
Signal propagation detection,
Analysis of delay between two signals,
Frequency anomaly detection